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Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
比较
Kingston ACR512X64D3S13C9G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
总分
Kingston ACR512X64D3S13C9G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
更快的读取速度,GB/s
16.2
11.5
测试中的平均数值
更快的写入速度,GB/s
12.6
8.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
11.5
16.2
写入速度,GB/s
8.5
12.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1756
2955
Kingston ACR512X64D3S13C9G 4GB RAM的比较
TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB RAM的比较
A-DATA Technology DDR4 2666 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C16-16GTZ 16GB
Apacer Technology 78.B1GET.AU00C 4GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Kingston 9905403-090.A01LF 4GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A5244CB0-CWE 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-017.A00G 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Kingston 99U5584-005.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-014.A00G 4GB
报告一个错误
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Bug description
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