Kingston KHX318C10FR/8G 8GB vs G Skill Intl F4-3200C22-8GRS 8GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F4-3200C22-8GRS 8GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

G Skill Intl F4-3200C22-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C22-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 60

左右 -58% 更低的延时
更快的读取速度，GB/s

16.2 6.8

测试中的平均数值
更快的写入速度，GB/s

13.3 5.4

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-3200C22-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 38
读取速度，GB/s

6.8 16.2
写入速度，GB/s

5.4 13.3
内存带宽，mbps

14900 25600

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1411 2944

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F3-2400C11-8GSR 8GB

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Crucial Technology CT8G4DFD824A.C16FF 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology BL8G32C16S4B.M8FE 8GB

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Kingston 9905403-156.A00LF 2GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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Corsair CMR32GX4M2A2666C16 16GB

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Samsung M4 70T2864QZ3-CE6 1GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

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Peak Electronics 256X64M-67E 2GB

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Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB