Kingston KHX318C10FR/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

更高的内存带宽，mbps

14900 12800

左右 1.16% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 60

左右 -107% 更低的延时
更快的读取速度，GB/s

13.1 6.8

测试中的平均数值
更快的写入速度，GB/s

8.5 5.4

测试中的平均数值

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

60 29
读取速度，GB/s

6.8 13.1
写入速度，GB/s

5.4 8.5
内存带宽，mbps

14900 12800

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-10-9-28 / 1866 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1411 2292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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