Kingston KN2M64-ETB 8GB vs Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

总分

Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

总分

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

差异规格评论

差异

Kingston KN2M64-ETB 8GB

需要考虑的原因
Kingston KN2M64-ETB 8GB

报告一个错误

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

需要考虑的原因
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

16.7 11.7

测试中的平均数值
更快的写入速度，GB/s

13.9 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KN2M64-ETB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

11.7 16.7
写入速度，GB/s

8.0 13.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2037 3168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML16GX3M2A1600C10 8GB

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Corsair CMK64GX4M2C3200C16 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology CT8G4DFS824A.M8FH3 8GB

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Corsair CMK16GX4M4A2666C16 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Crucial Technology CT8G4DFRA266.C8FP 8GB

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Kingston KF552C40-16 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Kingston K1N7HK-ELC 2GB

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Samsung V-GeN D4S8GL32A8TL 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

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Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB