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Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
33
左右 -18% 更低的延时
更快的读取速度,GB/s
18.1
17.8
测试中的平均数值
更快的写入速度,GB/s
14.8
12.5
测试中的平均数值
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
28
读取速度,GB/s
17.8
18.1
写入速度,GB/s
12.5
14.8
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3285
3564
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CH9 16GB
Kingston KTD3KX-MIB 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Kingston 99U5584-004.A00LF 4GB
Kingston 9965589-005.A01G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Corsair CMX8GX3M2A1600C11 4GB
Corsair CM4X4GF2400C14K4 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation D4N2400PS-8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Essencore Limited IM48GU48N24-FFFHM 8GB
Kingston 9905403-156.A00LF 2GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4U2133PS-8G 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston HP26D4U9S8MD-8 8GB
报告一个错误
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Bug description
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