RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BL32G32C16S4B.M16FB1 32GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Crucial Technology BL32G32C16S4B.M16FB1 32GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
36
左右 8% 更低的延时
更快的读取速度,GB/s
17.8
17.1
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology BL32G32C16S4B.M16FB1 32GB
报告一个错误
更快的写入速度,GB/s
14.9
12.5
测试中的平均数值
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
36
读取速度,GB/s
17.8
17.1
写入速度,GB/s
12.5
14.9
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3285
3449
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL32G32C16S4B.M16FB1 32GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Kingston KHX1600C9S3L/8G 8GB
Apacer Technology 78.BAGN8.40C0B 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMK64GX4M4C3333C16 16GB
Kingston 99U5584-007.A00LF 4GB
Kingston HP26D4S9D8MJ-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston LV32D4U2S8ME-16X 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK64GX4M8A2666C16 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-2666C15-4GVK 4GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
Samsung M378A1K43EB2-CWE 8GB
Panram International Corporation W4U2400PS-4G 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2800C15-8GVRB 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Kingston KVR16N11/8-SP 8GB
Kingston 9965662-012.A01G 16GB
Kingston 99U5595-005.A00LF 2GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
报告一个错误
×
Bug description
Source link