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Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2400C15-8GRB 8GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-2400C15-8GRB 8GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
G Skill Intl F4-2400C15-8GRB 8GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
36
左右 8% 更低的延时
更快的读取速度,GB/s
17.8
14.5
测试中的平均数值
更快的写入速度,GB/s
12.5
11.6
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-2400C15-8GRB 8GB
报告一个错误
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2400C15-8GRB 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
36
读取速度,GB/s
17.8
14.5
写入速度,GB/s
12.5
11.6
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3285
3001
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C15-8GRB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965516-112.A00LF 16GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2400C15-8GRB 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMW32GX4M4K4266C19 8GB
Crucial Technology RM51264BA1339.16FR 4GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD32GX4M2B2800C14 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Samsung M471A5244CB0-CWE 4GB
Avant Technology J642GU44J2320ND 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS4G4D240FSB.8FAR 4GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology AFLD48VH1P 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
报告一个错误
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Bug description
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