Lexar Co Limited LD4AU016G-H3200GST 16GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 11.7

测试中的平均数值
更快的写入速度，GB/s

12.5 6.6

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Memphis Electronic D4SO1G724GI-A58SD 8GB

需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 33

左右 -10% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 30
读取速度，GB/s

17.8 11.7
写入速度，GB/s

12.5 6.6
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3285 1832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston 9905403-156.A00LF 2GB

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Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

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Kingston 9965669-032.A00G 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB