Lexar Co Limited LD4AU016G-H3200GST 16GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 11.8

测试中的平均数值
更快的写入速度，GB/s

12.5 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Micron Technology 18ADF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 33

左右 -3% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 32
读取速度，GB/s

17.8 11.8
写入速度，GB/s

12.5 8.7
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3285 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Corsair CMD64GX4M4B2800C14 16GB

Corsair CMD64GX4M4B2800C14 16GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston KHX2666C16/16G 16GB

Kingston KHX2666C16/16G 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905701-006.A00G 16GB

Kingston 9905701-006.A00G 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB