Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M378A2G43BB3-CWE 16GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 24% 更低的延时

Samsung M378A2G43BB3-CWE 16GB

需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB

报告一个错误

更快的读取速度，GB/s

17.9 10.5

测试中的平均数值
更快的写入速度，GB/s

10.4 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M378A2G43BB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 38
读取速度，GB/s

10.5 17.9
写入速度，GB/s

7.1 10.4
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1425 3030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9965516-477.A00G 16GB

Kingston 9965516-477.A00G 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 9905702-008.A00G 8GB

Kingston 9905702-008.A00G 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB