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Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5173DB0-YK0 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 45
    左右 4% 更低的延时
Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5173DB0-YK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 45
  • 读取速度，GB/s
    10.6 left arrow 12.0
  • 写入速度，GB/s
    6.9 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 1939

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
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Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
Micron Technology 16KTF51264HZ-1G6M1 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
内存RAM
Micron Technology 16HTF25664HY-800G1 2GB
Micron Technology 16HTF25664HY-800G1 2GB
Kingmax Semiconductor KLDE88F-B8HS5 2GB
Kingmax Semiconductor KLDE88F-B8HS5 2GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA82GR7MFR4N-UH 16GB
SK Hynix HMA82GR7MFR4N-UH 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMK64GX4M2E3200C16 32GB
Corsair CMK64GX4M2E3200C16 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMH16GX4M2Z3600C18 8GB
Corsair CMH16GX4M2Z3600C18 8GB
内存RAM