Micron Technology 18ASF1G72PZ-2G1A2 8GB vs Samsung M393A1G40EB1-CRC 8GB

总分

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

总分

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

差异规格评论

差异

Micron Technology 18ASF1G72PZ-2G1A2 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1A2 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 52

左右 6% 更低的延时
更快的写入速度，GB/s

8.3 7.7

测试中的平均数值

Samsung M393A1G40EB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Samsung M393A1G40EB1-CRC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 52
读取速度，GB/s

10.5 10.5
写入速度，GB/s

8.3 7.7
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2374 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Corsair CMD128GX4M8A2400C14 16GB

Corsair CMD128GX4M8A2400C14 16GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB