Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 12.2

测试中的平均数值
更快的写入速度，GB/s

11.8 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 51

左右 -82% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 28
读取速度，GB/s

15.6 12.2
写入速度，GB/s

11.8 9.3
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2687 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMK32GX4M2B3000C15 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Mushkin 99[2/7/4]192F 4GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3400C16-16GVR 16GB

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Samsung M393B5170FH0-CK0 4GB

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Corsair CMK16GX4M2B3600C18 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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G Skill Intl F4-2666C19-16GRS 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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