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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40EB1-CPB 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M393A2G40EB1-CPB 16GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异 规格 评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 56
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Samsung M393A2G40EB1-CPB 16GB 需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40EB1-CPB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 56
  • 读取速度，GB/s
    15.6 left arrow 9.3
  • 写入速度，GB/s
    11.8 left arrow 7.7
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2687 left arrow 2200

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A2G40EB1-CPB 16GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Samsung M393A2G40EB1-CPB 16GB
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内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
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内存RAM
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