RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-4GVR 4GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-2400C17-4GVR 4GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
G Skill Intl F4-2400C17-4GVR 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
15.2
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2400C17-4GVR 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
92
左右 -268% 更低的延时
更快的写入速度,GB/s
12.0
1,266.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-4GVR 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
25
读取速度,GB/s
2,105.4
15.2
写入速度,GB/s
1,266.1
12.0
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
339
2740
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
G Skill Intl F4-2400C17-4GVR 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CM4B16G1J2400A16K2-O 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMK8GX4M1Z3600C18 8GB
Kingston HX318C10FK/4 4GB
Corsair CMK4GX4M1D2400C14 4GB
Corsair CM2X1024-8500C5D 1GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston KHX3733C19D4/16GX 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3200C14-8GTZKW 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Nanya Technology NT2GT64U8HD0BY-AD 2GB
V-GEN D4H16GS24A8 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMA82GU6JJR8N-VK 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Corsair CMX4GX3M1A1333C9 4GB
Avant Technology J641GU42J7240N3 8GB
报告一个错误
×
Bug description
Source link