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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CM4X4GF2400C16S2 4GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Corsair CM4X4GF2400C16S2 4GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
Corsair CM4X4GF2400C16S2 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
更快的读取速度,GB/s
14.9
14.5
测试中的平均数值
需要考虑的原因
Corsair CM4X4GF2400C16S2 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
36
左右 -44% 更低的延时
更快的写入速度,GB/s
11.7
9.5
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CM4X4GF2400C16S2 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
25
读取速度,GB/s
14.9
14.5
写入速度,GB/s
9.5
11.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2292
2129
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
Corsair CM4X4GF2400C16S2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DDR4 2400 2OZ 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-2666C19-32GNT 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD64GX4M4C3000C15 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C15-16GTZKY 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Samsung M3 78T5663RZ3-CF7 2GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMK128GX4M4A2666C16 32GB
ASint Technology SSA302G08-EGN1C 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905712-009.A00G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905599-025.A00G 8GB
报告一个错误
×
Bug description
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