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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 50
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 12.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.3
    测试中的平均数值
Gloway International Co. Ltd. TYA4U2666D19161C 16GB 需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 50
  • 读取速度，GB/s
    14.9 left arrow 12.5
  • 写入速度，GB/s
    9.5 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 2326

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT51264BA1339.D16F 4GB
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Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
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Corsair CMD32GX4M4C3200C14M 8GB
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A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
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内存RAM
Kingston 9965525-140.A00LF 8GB
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内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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内存RAM
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Kingston KHX1600C9D3/4G 4GB
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Kingston 9965662-010.A00G 16GB
内存RAM
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Crucial Technology CT25664AA800.M16FM 2GB
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Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
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内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
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Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM