Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-2400C17-4GVR 4GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值

G Skill Intl F4-2400C17-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 54

左右 -116% 更低的延时
更快的写入速度，GB/s

12.0 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-2400C17-4GVR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 25
读取速度，GB/s

3,573.5 15.2
写入速度，GB/s

1,308.1 12.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 2740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Kingston KHX318C10FR/8G 8GB

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Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

Samsung M3 93T5750CZA-CE6 2GB

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