Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 11.8

测试中的平均数值

G Skill Intl F4-3200C15-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 54

左右 -74% 更低的延时
更快的写入速度，GB/s

10.0 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C15-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 31
读取速度，GB/s

3,573.5 11.8
写入速度，GB/s

1,308.1 10.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 2605

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMW16GX4M2K3600C16 8GB

Corsair CMW16GX4M2K3600C16 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

Kingston 99P5474-037.A00LF 4GB

Kingston 99P5474-037.A00LF 4GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16