Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值
更快的写入速度，GB/s

2,256.8 13.4

测试中的平均数值

Samsung V-GeN D4S16GL26A8TL6 16GB

需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 64

左右 -100% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Samsung V-GeN D4S16GL26A8TL6 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 32
读取速度，GB/s

4,651.3 16.0
写入速度，GB/s

2,256.8 13.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 1897

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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A-DATA Technology AM1P26KC4U1-BACS 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Essencore Limited KD48GU880-36A180Z 8GB

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PNY Electronics PNY 2GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CMK16GX4M2K4500C19 8GB

Corsair CMK16GX4M2K4500C19 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB