RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology BLE8G4D26AFEA.16FBD 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
16.6
测试中的平均数值
需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
71
左右 -115% 更低的延时
更快的写入速度,GB/s
13.3
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
33
读取速度,GB/s
2,831.6
16.6
写入速度,GB/s
1,322.6
13.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
3141
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT351U6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C19-8GNT 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston XRMWRN-MIE 16GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3200C14-8GTZN 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMD32GX4M2B2800C14 16GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905702-071.A00G 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-3000C15-8GRBB 8GB
Kingston 9905702-010.A00G 8GB
G Skill Intl F4-3200C18-16GRS 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2666C18-16GRS 16GB
报告一个错误
×
Bug description
Source link