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Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2800C14-16GTZ 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-2800C14-16GTZ 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
G Skill Intl F4-2800C14-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
13.8
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2800C14-16GTZ 16GB
报告一个错误
低于PassMark测试中的延时,ns
38
71
左右 -87% 更低的延时
更快的写入速度,GB/s
10.2
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2800C14-16GTZ 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
38
读取速度,GB/s
2,831.6
13.8
写入速度,GB/s
1,322.6
10.2
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
2841
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-2800C14-16GTZ 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMG32GX4M2D3600C18 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2800C14-16GTZ 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Samsung M471B1G73DB0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Samsung M391B5273CH0-CH9 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
Kingston 99U5584-001.A00LF 4GB
Samsung M378A5143EB1-CPB 4GB
Apacer Technology 78.A1GC6.9H10C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Kingston 99U5584-004.A00LF 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung M471B5773DH0-CH9 2GB
Apacer Technology 78.CAGN4.4020B 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
报告一个错误
×
Bug description
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