Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-4000C17-8GTZR 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

G Skill Intl F4-4000C17-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 71

左右 -196% 更低的延时
更快的读取速度，GB/s

20.2 2

测试中的平均数值
更快的写入速度，GB/s

18.4 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-4000C17-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 24
读取速度，GB/s

2,831.6 20.2
写入速度，GB/s

1,322.6 18.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 4114

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F4-4000C17-8GTZR 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology CT16G4SFD824A.M16FE 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

G Skill Intl F4-3200C16-8GTZKO 8GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston 8ATF1G64AZ-2G3A141 8GB

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Kingston 9905471-002.A00LF 2GB

Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB