Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-4266C16-8GTZR 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

G Skill Intl F4-4266C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4266C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 71

左右 -184% 更低的延时
更快的读取速度，GB/s

25.2 2

测试中的平均数值
更快的写入速度，GB/s

19.5 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-4266C16-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 25
读取速度，GB/s

2,831.6 25.2
写入速度，GB/s

1,322.6 19.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 4167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMSX32GX4M1A2666C18 32GB

Corsair CMSX32GX4M1A2666C18 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

Corsair CMK32GX5M2B5600C36 16GB

Corsair CMK32GX5M2B5600C36 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMSX8GX4M2A2666C18 4GB

Corsair CMSX8GX4M2A2666C18 4GB