Nanya Technology NT512T64U88B0BY-3C 512MB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 71

左右 -122% 更低的延时
更快的读取速度，GB/s

22.6 2

测试中的平均数值
更快的写入速度，GB/s

16.4 1,322.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 32
读取速度，GB/s

2,831.6 22.6
写入速度，GB/s

1,322.6 16.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

399 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Corsair VSA2GSDS667C4 2GB

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Kingston MSI24D4S7S8MH-8 8GB

Kingston MSI24D4S7S8MH-8 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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