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Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Micron Technology 16ATF4G64HZ-3G2E1 32GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
16.4
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB
报告一个错误
低于PassMark测试中的延时,ns
38
71
左右 -87% 更低的延时
更快的写入速度,GB/s
13.7
1,322.6
测试中的平均数值
更高的内存带宽,mbps
25600
5300
左右 4.83 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
38
读取速度,GB/s
2,831.6
16.4
写入速度,GB/s
1,322.6
13.7
内存带宽,mbps
5300
25600
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
399
3206
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3000C15-16GVR 16GB
Corsair CML8GX3M2A1866C9 4GB
G Skill Intl F4-4133C19-8GTZR 8GB
Apacer Technology 78.01G86.9H50C 1GB
Golden Empire CL14-16-16 D4-3000 4GB
Kingston KHX1600C9D3/8G 8GB
Mushkin 99[2/7/4]205F 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD16GX4M4C3200C16 4GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMW16GX4M2C3200C16 8GB
Kingston 99U5403-036.A00G 4GB
Super Talent F24EB8GS 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-16GTZR 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Golden Empire CL14-16-16 D4-3000 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMR16GX4M2C3000C15 8GB
报告一个错误
×
Bug description
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