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Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1K43CB1-CTD 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M471A1K43CB1-CTD 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.8
    测试中的平均数值
Samsung M471A1K43CB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43CB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 71
    左右 -115% 更低的延时
  • 更快的写入速度，GB/s
    11.9 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1K43CB1-CTD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 33
  • 读取速度，GB/s
    2,831.6 left arrow 15.8
  • 写入速度，GB/s
    1,322.6 left arrow 11.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2824

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Samsung M471A1K43CB1-CTD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M2A2800C16 8GB
Corsair CMK16GX4M2A2800C16 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M393A2G40DB0-CPB 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT32GX4M4Z3200C16 8GB
Corsair CMT32GX4M4Z3200C16 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM