PNY Electronics PNY 2GB vs Corsair CMK16GX4M2B3200C14 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMK16GX4M2B3200C14 8GB

需要考虑的原因
Corsair CMK16GX4M2B3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

18.2 13.8

测试中的平均数值
更快的写入速度，GB/s

13.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMK16GX4M2B3200C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

13.8 18.2
写入速度，GB/s

8.4 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GE2400Z16K4 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Corsair CM4X16GE2933C19S2 16MB

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Mushkin 99[2/7/4]204F 4GB

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Samsung M4 70T2864EH3-CE6 1GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Kingston 99U5474-023.A00LF 4GB

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A-DATA Technology AO2P21FC4R1-BRFS 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Apacer Technology 78.C1GMM.BAC0B 8GB