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PNY Electronics PNY 2GB
EVGA 8GX-D4-2800-MR 8GB

PNY Electronics PNY 2GB vs EVGA 8GX-D4-2800-MR 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
EVGA 8GX-D4-2800-MR 8GB

EVGA 8GX-D4-2800-MR 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
EVGA 8GX-D4-2800-MR 8GB 需要考虑的原因
EVGA 8GX-D4-2800-MR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 27
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
EVGA 8GX-D4-2800-MR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 23
  • 读取速度，GB/s
    13.8 left arrow 17.4
  • 写入速度，GB/s
    8.4 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3039

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

EVGA 8GX-D4-2800-MR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston ACR512X64D3S13C9G 4GB
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Kingston KF3600C18D4/16GX 16GB
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Samsung M393B2G70AH0-YH9 16GB
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内存RAM
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SpecTek Incorporated ?????????????????? 2GB
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Kingston 9905625-139.A00G 16GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
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Corsair CMW32GX4M2C3466C16 16GB
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内存RAM
AMD AE34G1601U1 4GB
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Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
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Samsung M393A2G40EB1-CRC 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905734-059.A00G 16GB
内存RAM