RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
G Skill Intl F4-2133C15-4GFX 4GB
比较
PNY Electronics PNY 2GB vs G Skill Intl F4-2133C15-4GFX 4GB
总分
PNY Electronics PNY 2GB
总分
G Skill Intl F4-2133C15-4GFX 4GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
80
左右 66% 更低的延时
更快的写入速度,GB/s
8.4
7.4
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2133C15-4GFX 4GB
报告一个错误
更快的读取速度,GB/s
14.1
13.8
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-2133C15-4GFX 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
80
读取速度,GB/s
13.8
14.1
写入速度,GB/s
8.4
7.4
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2274
1564
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
G Skill Intl F4-2133C15-4GFX 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK32GX4M4B3200C16 8GB
Samsung M471A2G43BB2-CWE 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-2133C15-4GFX 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CM4X8GE3000C15K4 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Panram International Corporation PUD43000C154G4NJW 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Samsung M395T2863QZ4-CF76 1GB
Maxsun MSD44G24Q0 4GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4000C17-16GTRSB 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8
Samsung M3 78T2863RZS-CF7 1GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3000C15-8GVR 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
报告一个错误
×
Bug description
Source link