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PNY Electronics PNY 2GB
G Skill Intl F4-2666C18-4GRS 4GB

PNY Electronics PNY 2GB vs G Skill Intl F4-2666C18-4GRS 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
G Skill Intl F4-2666C18-4GRS 4GB 需要考虑的原因
G Skill Intl F4-2666C18-4GRS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.4 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-2666C18-4GRS 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    13.8 left arrow 14.9
  • 写入速度，GB/s
    8.4 left arrow 11.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2330

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-2666C18-4GRS 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
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内存RAM
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Kingston 9965667-001.A00G 16GB
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G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Kingston KCDT82-MIE 4GB
内存RAM
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
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Ramaxel Technology RMT3170EB68F9W1600 4GB
内存RAM