PNY Electronics PNY 2GB vs G Skill Intl F4-3200C16-4GTZB 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

G Skill Intl F4-3200C16-4GTZB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GTZB 4GB

报告一个错误

更快的读取速度，GB/s

17.1 13.8

测试中的平均数值
更快的写入速度，GB/s

13.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-4GTZB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.8 17.1
写入速度，GB/s

8.4 13.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD48GS88C-32N2200 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Samsung M393B5170FH0-CK0 4GB

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Maxsun MSD44G24Q0 4GB

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Kingston 99U5474-013.A00LF 2GB

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Kingston X0N6VG-HYD2 16GB

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Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

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Avant Technology F6451U64F9333G 4GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3000C16-16GSXKB 16GB

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Corsair CMK32GX4M2C3333C16 16GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Corsair CMK32GX4M4B3200C14 8GB

Corsair CMK32GX4M4B3200C14 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Corsair CMK64GX4M2D3600C18 32GB

Corsair CMK64GX4M2D3600C18 32GB