PNY Electronics PNY 2GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 48% 更低的延时
更快的读取速度，GB/s

13.8 10

测试中的平均数值
更快的写入速度，GB/s

8.4 7.6

测试中的平均数值

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

需要考虑的原因
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 52
读取速度，GB/s

13.8 10.0
写入速度，GB/s

8.4 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Essencore Limited KD4AGU880-32A160X 16GB

Essencore Limited KD4AGU880-32A160X 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB