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PNY Electronics PNY 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
比较
PNY Electronics PNY 2GB vs Micron Technology 18ADF2G72AZ-2G3A1 16GB
总分
PNY Electronics PNY 2GB
总分
Micron Technology 18ADF2G72AZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
28
左右 4% 更低的延时
需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3A1 16GB
报告一个错误
更快的读取速度,GB/s
17.8
13.8
测试中的平均数值
更快的写入速度,GB/s
14.7
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
28
读取速度,GB/s
13.8
17.8
写入速度,GB/s
8.4
14.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2274
3660
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMR32GX4M4C3466C16 8GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Samsung M378B5673FH0-CH9 2GB
Kingston 99U5471-020.A00LF 4GB
Kingston MSI16D3LS1MNG/8G 8GB
A-DATA Technology DDR3 1866 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Kingston 39P5429-006.AO01 2GB
EXCELERAM EKBLACK4163016AD 8GB
G Skill Intl F5-6400J3239G16G 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3333C16-16GVR 16GB
Samsung M391B5673FH0-CH9 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M471A1A43DB0-CPB 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Apacer Technology 78.C2GFL.C720B 8GB
报告一个错误
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Bug description
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