PNY Electronics PNY 2GB vs Mushkin MES4S213FF16G28 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Mushkin MES4S213FF16G28 16GB

需要考虑的原因
Mushkin MES4S213FF16G28 16GB

报告一个错误

更快的写入速度，GB/s

11.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Mushkin MES4S213FF16G28 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

13.8 13.8
写入速度，GB/s

8.4 11.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Corsair CML8GX3M2A1866C9 4GB

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Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB