PNY Electronics PNY 2GB vs Samsung M471A2K43CB1-CTD 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Samsung M471A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.5 13.8

测试中的平均数值
更快的写入速度，GB/s

11.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Samsung M471A2K43CB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.8 15.5
写入速度，GB/s

8.4 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264AZ-3G2J1 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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G Skill Intl F4-2400C15-16GFXR 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3600C16-16GTRSC 16GB

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Corsair CMK32GX4M2D3600C18 16GB

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Kingston 99U5584-005.A00LF 4GB

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Apacer Technology 78.CAGMT.40C0B 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9905624-033.A00G 8GB

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Kingston KVR800D2N6/2G 2GB

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Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F4-3000C15-8GVR 8GB

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Corsair VS1GB800D2 1GB

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Corsair CMD32GX4M2B2800C14 16GB