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PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
比较
PUSKILL DDR3 1600 8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
总分
PUSKILL DDR3 1600 8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
更快的读取速度,GB/s
16.7
13.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
38
左右 -36% 更低的延时
更快的写入速度,GB/s
10.1
10.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
28
读取速度,GB/s
16.7
13.8
写入速度,GB/s
10.0
10.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2753
2179
PUSKILL DDR3 1600 8G 8GB RAM的比较
A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston MSI24D4U7D8MH-16 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Samsung 1600 CL10 Series 8GB
Kingston 9965662-008.A01G 16GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK4GX4M1A2400C14 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-5066C20-8GVK 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M2K4333C19 8GB
Nanya Technology M2S4G64CB8HG5N-DI 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
Kingston 9905471-001.A01LF 2GB
Samsung M391A1G43EB1-CPB 8GB
报告一个错误
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Bug description
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