Samsung 1600 CL10 Series 8GB vs Crucial Technology CT4G4DFS824A.C8FBD1 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBD1 4GB

报告一个错误

更快的读取速度，GB/s

16.6 16.1

测试中的平均数值
更快的写入速度，GB/s

13.4 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

16.1 16.6
写入速度，GB/s

10.1 13.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 3023

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Kingston 9965662-016.A00G 16GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB