Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4DFD824A.M16FF 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Crucial Technology CT8G4DFD824A.M16FF 8GB

需要考虑的原因
Crucial Technology CT8G4DFD824A.M16FF 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的读取速度，GB/s

16.3 16.1

测试中的平均数值
更快的写入速度，GB/s

13.1 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

16.1 16.3
写入速度，GB/s

10.1 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 2850

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International Co. Ltd. TYP4U3200E16082C 8GB

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Samsung M393B5270CH0-CH9 4GB

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Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

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Kingston 9905471-002.A00LF 2GB

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Essencore Limited IM44GU48N26-FFFHM 4GB

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Micron Technology 72ASS8G72LZ-2G6D2 64GB