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Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,123.3 left arrow 12.9
    测试中的平均数值
Chun Well Technology Holding Limited D4U0826190B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 59
    左右 -103% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 29
  • 读取速度，GB/s
    4,833.8 left arrow 16.7
  • 写入速度，GB/s
    2,123.3 left arrow 12.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    731 left arrow 3273

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
内存RAM
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G Skill Intl F3-10600CL9-2GBNT 2GB
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Micron Technology 72ASS4G72LZ-2G1A1 32GB
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Kingston KVR533D2N4 512MB
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
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Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
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Corsair CMK32GX4M2A2133C13 16GB
Corsair CMK32GX4M2A2133C13 16GB
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Kingston KF548C38-16 16GB
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Kingston 9905584-016.A00LF 4GB
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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Crucial Technology CT16G4SFS832A.M8FB 16GB
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Peak Electronics 256X64M-67E 2GB
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SK Hynix HMA82GU6CJR8N-XN 16GB
内存RAM
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Kingston 99U5403-036.A00G 4GB
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Kingston 9905678-042.A00G 8GB
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Netac Technology Co Ltd EKBLACK4163216AD 8GB
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AMD AE34G1601U1 4GB
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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
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AMD AE34G1601U1 4GB
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Kingston K9CXF2-MIE 8GB
内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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Samsung M393A2K40BB2-CTD 16GB
内存RAM