Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology BLS8G4D26BFSB.16FD2 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,123.3 14.2

测试中的平均数值

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSB.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,833.8 18.2
写入速度，GB/s

2,123.3 14.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3300

RAM Latency Calculator

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMT32GX4M2Z3200C16 16GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB