Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-3600C15-8GTZ 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19.7

测试中的平均数值
更快的写入速度，GB/s

2,123.3 17.5

测试中的平均数值

G Skill Intl F4-3600C15-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3600C15-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 59

左右 -136% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3600C15-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 25
读取速度，GB/s

4,833.8 19.7
写入速度，GB/s

2,123.3 17.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3917

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD32GX4M4B3600C16 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston XJV223-MIE-NX 16GB

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Corsair CMK64GX4M2Z4000C18 32GB

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Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-3600C15-8GTZ 8GB

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Kingston 9905403-134.A00LF 2GB

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Kingston KF552C40-16 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

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