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Samsung M3 78T2953EZ3-CF7 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Samsung M3 78T2953EZ3-CF7 1GB vs Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 58
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 29
  • 读取速度，GB/s
    4,241.0 left arrow 16.7
  • 写入速度，GB/s
    1,950.7 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 3076

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
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Team Group Inc. TEANGROUP-UD4-2400 8GB
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SK Hynix HMT451U7BFR8C-RD 4GB
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Samsung M378B5273DH0-CH9 4GB
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Samsung M391B5673EH1-CH9 2GB
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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Samsung M471A1K1KCB1-CRC 8GB
内存RAM
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SK Hynix HMA451R7AFR8N-UH 4GB
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Samsung M3 78T5663RZ3-CF7 2GB
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Corsair CMR16GX4M2C3600C18 8GB
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