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Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
18.2
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
46
左右 -77% 更低的延时
更快的写入速度,GB/s
17.3
1,519.2
测试中的平均数值
更高的内存带宽,mbps
21300
3200
左右 6.66 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
26
读取速度,GB/s
2,909.8
18.2
写入速度,GB/s
1,519.2
17.3
内存带宽,mbps
3200
21300
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
241
3938
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK16GX4M2L3000C15 8GB
Samsung M391B5673FH0-CH9 2GB
A-DATA Technology AX4S2800316G18-B 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-2400C17-8GSXW 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Avant Technology J641GU49J2320NE 8GB
Team Group Inc. UD5-6400 16GB
Kingston KVR26N19D8/16 16GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMSO4GX4M1A2133C15 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Kingston HP32D4S2S1ME-4 4GB
Kingston KVR16N11/8-SP 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2133C15-8GNS 8GB
Kingston 9905403-134.A00LF 2GB
Samsung M471A1K1KBB0-CPB 8GB
报告一个错误
×
Bug description
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