Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT16G4SFS832A.C8FE 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值

Crucial Technology CT16G4SFS832A.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFS832A.C8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 46

左右 -15% 更低的延时
更快的写入速度，GB/s

13.7 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFS832A.C8FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 40
读取速度，GB/s

2,909.8 17.0
写入速度，GB/s

1,519.2 13.7
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D26BFSB.16FBR 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology CT8G4DFD8213.C16FDD2 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology CT8G4DFD824A.C16FHP 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3200C15-8GTZSK 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB