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Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
12.2
测试中的平均数值
需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
46
左右 -64% 更低的延时
更快的写入速度,GB/s
9.3
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
28
读取速度,GB/s
2,909.8
12.2
写入速度,GB/s
1,519.2
9.3
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2382
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905702-010.A00G 8GB
Kingston KF3600C18D4/16GX 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CM4B8G7L2666A16K2-O 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK8GX4M2B4000C19 4GB
Kingston 99U5474-013.A00LF 2GB
A-DATA Technology DDR4 2800 8GB
Kingston 99U5595-005.A00LF 2GB
Samsung M378A1G43DB0-CPB 8GB
Essencore Limited KD48GU88C-26N1600 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-4600C18-8GTRS 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-4400C18-8GTRG 8GB
Kingston KVR533D2N4 512MB
Corsair CMK16GX4M2D3600C18 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Samsung M471B5173EB0-YK0 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
报告一个错误
×
Bug description
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