Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CT16G4SFD832A.C16FP 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,168.2 14.3

测试中的平均数值

Crucial Technology CT16G4SFD832A.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 60

左右 -76% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 34
读取速度，GB/s

4,595.2 16.6
写入速度，GB/s

2,168.2 14.3
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

941 3282

RAM Latency Calculator

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RAM 2

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最新比较

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G Skill Intl F4-3200C14-32GTZR 32GB

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Corsair CML8GX3M2A1866C9 4GB

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Smart Modular SF4721G8CKHH6DFSDS 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology BLM16G44C19U4B.M8FB1 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 9965525-018.A00LF 4GB

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Micron Technology 16ATF2G64HZ-3G2J1 16GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston KHX3000C16D4/16GX 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

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Kingston HP32D4S2S1ME-4 4GB

Kingston HP32D4S2S1ME-4 4GB

Samsung M378A2K43BB1-CRC 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB