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Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
13.5
测试中的平均数值
更快的写入速度,GB/s
2,168.2
10.2
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
60
左右 -107% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
29
读取速度,GB/s
4,595.2
13.5
写入速度,GB/s
2,168.2
10.2
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
941
2088
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM的比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 78.B1GET.AU00C 4GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Corsair CM2X1024-6400C4 1GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-4266C16-8GTZR 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 9905701-020.A00G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Corsair CMD32GX4M4B2800C14 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMU64GX4M4D3000C16 16GB
Samsung M471B1G73DB0-YK0 8GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Kingston 9965525-058.A00LF 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KMKYF9-MIB 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-4000C15-8GTRG 8GB
报告一个错误
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Bug description
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