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Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 16ATF2G64AZ-2G6B1 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 13.5
    测试中的平均数值
Micron Technology 16ATF2G64AZ-2G6B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 60
    左右 -173% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 22
  • 读取速度，GB/s
    4,595.2 left arrow 18.2
  • 写入速度，GB/s
    2,168.2 left arrow 13.5
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3201

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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SpecTek Incorporated ?????????????????? 2GB
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Kingston 9905625-142.A00G 16GB
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Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
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Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
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Corsair CMD16GX4M2E4000C19 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Micron Technology 8ATF51264AZ-2G1A1 4GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM
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Qimonda 64T128020EDL2.5C2 1GB
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Corsair CMK16GX4M2C3600C20 8GB
内存RAM
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Kingston 9905471-006.A01LF 4GB
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Panram International Corporation M424051 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Corsair CMD16GX4M4A2666C16 4GB
内存RAM