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Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA425S6BJR6N-UH 2GB

Samsung M3 78T5663RZ3-CE6 2GB vs SK Hynix HMA425S6BJR6N-UH 2GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 101
    左右 41% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 14.2
    测试中的平均数值
SK Hynix HMA425S6BJR6N-UH 2GB 需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB
报告一个错误
  • 更快的写入速度，GB/s
    7.0 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 101
  • 读取速度，GB/s
    4,595.2 left arrow 14.2
  • 写入速度，GB/s
    2,168.2 left arrow 7.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 1313

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

SK Hynix HMA425S6BJR6N-UH 2GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
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SK Hynix HMA425S6BJR6N-UH 2GB
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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内存RAM
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内存RAM
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